| PART |
Description |
Maker |
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
| IRF840 -IRF840 |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BA7665AFS |
3 channel 75ohm driver for DVD (Y/C MIX Type)
|
Rohm
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FDD45AN06LA0 |
60V N-Channel PowerTrench MOSFET
60V N-Channel PowerTrench ?MOSFE
N-CHANNEL POWERTRENCH MOSFET 60V, 22A, 45M
|
Fairchild Semiconductor
|
| STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT
(STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH
(STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
|
